2SA808 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic
Número de pieza
componentes Descripción
Lista de partido
2SA808 Datasheet PDF : 3 Pages
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA IB=0
VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A
ICBO
Collector cut-off current
VCB=-80V; IE=0
IEBO
Emitter cut-off current
VEB=-6V; IC=0
hFE
DC current gain
IC=-3A ; VCE=-4V
fT
Transition frequency
IC=-0.5A ; VCE=-12V
Switching times
tr
Rise time
tstg
Storage time
tf
Fall time
VCC=-10V;IC=-3A; RL=3Ω
IB1=-0.3A; IB2=50mA
Product Specification
2SA808
MIN TYP. MAX UNIT
-80
V
-1.5
V
-1.0 mA
-1.0 mA
20
10
MHz
1.2
μs
1.8
μs
0.3
μs
2
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