IRF820 Ver la hoja de datos (PDF) - Intersil
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IRF820 Datasheet PDF : 7 Pages
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IRF820
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
TEST CONDITIONS
ISD
Modified MOSFET Symbol
D
ISDM
Showing the Integral
Reverse P-N Junction
Rectifier
G
MIN TYP MAX UNITS
-
-
2.5
A
-
-
8.0
A
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
S
TJ = 25oC, ISD = 2.5A, VGS = 0V (Figure 13)
TJ = 25oC, ISD = 2.5A, dISD/dt = 100A/µs
TJ = 25oC, ISD = 2.5A, dISD/dt = 100A/µs
-
-
1.6
V
130 300 540 ns
0.57 1.4 2.3
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 60mH, RG = 25Ω, peak IAS = 2.5A.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
2.5
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
0.5
1
0.2
0.1
0.05
0.1 0.02
0.01
SINGLE PULSE
10-2
10-5
10-4
10-3
10-2
0.1
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-247
PDM
t1
NOTES:
t2
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
1
10
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