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B1470S

Silicon PNP triple diffusion planar type darlington

Panasonic Corporation 

2SB1470

PC  Ta

200

(1)TC=Ta

(2)With a 100×100×2mm

Al heat sink

160

(3)Without heat sink

(PC=3.5W)

(1)

120

80

40

(2)

(3)

0

0

40

80

120

160

Ambient temperature Ta (°C)

−100

VBE(sat)  IC

IC/IB=1000

−10

TC=–25˚C

−1

25˚C

125˚C

− 0.1

−8

TC=25˚C

−6

IC  VCE

IB=–1.0mA

–0.9mA

–0.8mA

–0.7mA

−4

–0.6mA

–0.5mA

−2

–0.4mA

–0.3mA

–0.2mA

0

0

−4

−8

−12

−16

Collector-emitter voltage VCE (V)

−100

VCE(sat)  IC

IC/IB=1000

−10

−1

TC=25˚C

25˚C

125˚C

− 0.1

− 0.01

− 0.1

−1

−10

−100

Collector current IC (A)

hFE  IC

105

VCE=–5V

104

TC=125˚C

103

25˚C

–25˚C

102

Cob  VCB

104

IE=0

f=1MHz

TC=25˚C

103

102

10

− 0.01

− 0.1

−1

−10

−100

Collector current IC (A)

10

− 0.1

−1

−10

Collector current IC (A)

1

− 0.1

−1

−10

−100

Collector-base voltage VCB (V)

ton , tstg , tf  IC

100

Pulsed tw=1ms

Duty cycle=1%

IC/IB=1000

(–IB1=IB2)

VCC=–50V

10

TC=25˚C

tstg

tf

1

ton

0.1

Safe operation area

−100

Non repetitive pulse

TC=25˚C

ICP

−10

IC

t=10ms

DC

t=1ms

−1

− 0.1

0.01

0

−2 −4 −6 −8 −10

Collector current IC (A)

− 0.01

−1

−10

−100

−1 000

Collector-emitter voltage VCE (V)

2

SJD00076BED

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