2SB1655 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

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2SB1655

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;IB=0

V(BR)CBO Collector-base breakdown voltage

IC=-50μA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-50μA ;IC=0

VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A

VBEsat Base-emitter saturation voltage

IC=-2A ;IB=-0.2A

ICBO

Collector cut-off current

VCB=-60V; IE=0

IEBO

Emitter cut-off current

VEB=-7V; IC=0

hFE

DC current gain

IC=-0.5A ; VCE=-5V

COB

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

fT

Transition frequency

IC=-0.5A ; VCE=-5V

Product Specification

2SB1655

MIN TYP. MAX UNIT

-60

V

-80

V

-7

V

-1.5

V

-1.5

V

-10 μA

-10 μA

100

200

50

pF

15

MHz

2

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