B1642 Ver la hoja de datos (PDF) - Inchange Semiconductor

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B1642

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=-2.5A; IB=-0.25A

VBE

Base-emitter voltage

IC=-0.5A;VCE=-5V

ICBO

Collector cut-off current

VCB=-60V; IE=0

IEBO

Emitter cut-off current

VEB=-7V; IC=0

hFE-1

DC current gain

IC=-0.5A ; VCE=-5V

hFE-2

DC current gain

IC=-3A ; VCE=-5V

fT

Transition frequency

IC=-0.5A ; VCE=-5V

COB

Collector output capacitance

IE=0; f=1MHz;VCB=-10V

Product Specification

2SB1642

MIN TYP. MAX UNIT

-60

V

-0.7 -1.5

V

-0.75 -1.0

V

-10

μA

-10

μA

100

320

20

9.0

MHz

50

pF

2

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