Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB941 2SB941A
DESCRIPTION
·With TO-220Fa package
·Low collector saturation voltage
·Complementary to type 2SD1266/1266A
APPLICATIONS
·For low-frequency power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25℃)
导体 SYMBOL
PARAMETER
CONDITIONS
固I电NC半HANGE SEMICONDUCTOR VCBO
Collector-base voltage
2SB941
2SB941A
Open emitter
VCEO
Collector-emitter voltage
2SB941
2SB941A
Open base
VALUE
-60
-80
-60
-80
UNIT
V
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-3
A
ICM
Collector current-peak
-5
A
PC
Collector power dissipation
Ta=25℃
TC=25℃
2
W
35
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃