B941A Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

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B941A

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

Product Specification

2SB941 2SB941A

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO

Collector-emitter

voltage

2SB941

2SB941A

IC=-30mA ,IB=0

VCEsat Collector-emitter saturation voltage IC=-3A, IB=-0.375A

VBE

Base-emitter voltage

IC=-3A ; VCE=-4V

IEBO

Emitter cut-off current

VEB=-5V; IC=0

ICEO

Collector

cut-off current

2SB941 VCE=-30V; IB=0

2SB941A VCE=-60V; IB=0

ICES

Collector

cut-off current

2SB941 VCE=-60V; VBE=0

2SB941A VCE=-80V; VBE=0

hFE-1

DC current gain

IC=-1A ; VCE=-4V

hFE-2

DC current gain

IC=-3A ; VCE=-4V

fT

Transition frequency

IC=0.5A; VCE=-10V,f=10MHz

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

IC=-1A

IB1=-0.1A ,IB2=0.1A

‹ hFE-1 Classifications

Q

P

70-150

120-250

MIN TYP. MAX UNIT

-60

V

-80

-1.2

V

-1.8

V

-1

mA

-0.3 mA

-0.2 mA

70

250

10

30

MHz

0.5

μs

1.2

μs

0.3

μs

2

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