B943 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

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B943

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ,IB=0

VCEsat Collector-emitter saturation voltage IC=-2A, IB=-0.1A

VBEsat Base-emitter saturation voltage

IC=-2A, IB=-0.1A

IEBO

ICBO

hFE-1

Emitter cut-off current

Collector cut-off current

DC current gain

VEB=-5V; IC=0

VCB=-100V; IE=0

IC=-0.1A ; VCE=-2V

hFE-2

DC current gain

IC=-0.5A ; VCE=-2V

fT

Transition frequency

IC=-0.5A; VCE=-10V

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

IC=-0.5A;IB1=-IB2=-50mA

‹ hFE-2 Classifications

R

Q

P

60-120 90-180 130-260

Product Specification

2SB943

MIN TYP. MAX UNIT

-80

V

-0.5

V

-1.5

V

-50

μA

-10

μA

45

60

260

30

MHz

0.3

μs

1.1

μs

0.3

μs

2

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