C1318A Ver la hoja de datos (PDF) - Panasonic Corporation
Número de pieza
componentes Descripción
Lista de partido
C1318A Datasheet PDF : 4 Pages
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Transistor
2SC1318A
Silicon NPN epitaxial planer type
For low-frequency driver amplification
Complementary to 2SA0720A (2SA720A)
I Features
G High collector to emitter voltage VCEO.
G Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
I Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
80
V
Collector to emitter voltage VCEO
70
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
1
A
Collector current
IC
0.5
A
Collector power dissipation PC
750
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
5.0±0.2
Unit: mm
4.0±0.2
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
I Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
ICBO
VCBO
VCB = 20V, IE = 0
IC = 10µA, IE = 0
0.1
µA
80
V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 150mA*2
VCE = 10V, IC = 500mA*2
IC = 300mA, IB = 30mA*2
IC = 300mA, IB = 30mA*2
70
V
5
V
85
160 340
40
100
0.2
0.6
V
0.85 1.5
V
Transition frequency
fT
VCB = 10V, IE = –50mA, f = 200MHz
120
MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
11
20
pF
*2 Pulse measurement
*1hFE1 Rank classification
Rank
Q
R
hFE1
85 ~ 170 120 ~ 240
S
170 ~ 340
Note.) The Part number in the Parenthesis shows conventional part number.
1
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