C1447 Ver la hoja de datos (PDF) - Inchange Semiconductor

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C1447

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-base breakdown voltage

IC=10μA ;IE=0

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=10μA ;IC=0

VCEsat Collector-emitter saturation voltage IC=50mA ;IB=5mA

ICBO

Collector cut-off current

VCB=250V;IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=50mA ; VCE=10V

fT

Transition frequency

IC=10mA ; VCE=30V

Product Specification

2SC1447

MIN TYP. MAX UNIT

300

V

300

V

7

V

2.0

V

1.0 μA

1.0 μA

40

170

80

MHz

2

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