C2535 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Lista de partido
C2535 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·High collector breakdown voltage
: VCEO=400V(Min)
·Excellent switching time
: tr=1.0μs(Max.)
: tf=1.0μs(Max.
APPLICATIONS
·High speed high voltage switching applications
·Switching regulator applications
·High speed DC-DC converter applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC2535
·
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PC
Collector dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25℃
TC=25℃
VALUE
500
400
6
5
1
1.5
40
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
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