C3310 Ver la hoja de datos (PDF) - SavantIC Semiconductor

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C3310

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC3310

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-base breakdown voltage

IC=1mA ;IE=0

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A

VBEsat

Base-emitter saturation voltage

IC=5A ;IB=1A

ICBO

Collector cut-off current

VCB=400V; IE=0

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE-1

DC current gain

IC=3A ; VCE=5V

hFE-2

DC current gain

IC=5A ; VCE=5V

Switching times

Tr

Rise time

ts

Storage time

tf

Fall time

IC=4A ;IB1=-IB2=0.4A

VCC<200V;RL=10>

MIN TYP. MAX UNIT

500

V

400

V

1.0

V

1.5

V

100

µA

1

mA

12

8

1.0

µs

2.5

µs

1.0

µs

2

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