C3611 Ver la hoja de datos (PDF) - Panasonic Corporation
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C3611 Datasheet PDF : 5 Pages
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Power Transistors
2SC3611
Silicon NPN epitaxial planar type
For video amplifier
■ Features
• High transition frequency fT
• Small collector output capacitance (Common base, input open cir-
cuited) Cob
• Wide current range
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
110
V
Collector-emitter voltage
(Resistor between B and E)
VCER
100
V
Collector-emitter voltage (Base open) VCEO
50
V
Emitter-base voltage (Collector open) VEBO
3.5
V
Collector current
IC
150
mA
Peak collector current
ICP
300
mA
Collector power dissipation
PC
1.2
W
4.0 *
Junction temperature
Storage temperature
Tj
150
°C
Tstg −55 to +150 °C
Note) *: With a 100 × 100 × 2 mm Al heat sink
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1
1.76±0.1
123
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 100 µA, IE = 0
110
V
Collector-emitter voltage
VCER IC = 500 µA, RBE = 470 Ω
100
V
(Resistor between B and E)
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
50
V
Emitter-base voltage (Collector open) VEBO IE = 100 µA, IC = 0
3.5
V
Collector-emitter cutoff current (Base open) ICEO VCE = 35 V, IB = 0
10
µA
Forward current transfer ratio
hFE VCE = 5 V, IC = 100 mA
20
Collector-emitter saturation voltage
VCE(sat) IC = 150 mA, IB = 15 mA
0.5
V
Transition frequency
fT1 VCB = 10 V, IE = −10 mA, f = 200 MHz
300
MHz
fT2 VCB = 10 V, IE = −110 mA, f = 200 MHz
350
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 30 V, IE = 0, f = 1 MHz
3
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
SJD00108BED
1
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