C4153 Ver la hoja de datos (PDF) - Inchange Semiconductor

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C4153

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC4153

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0

120

V

VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.3A

0.5

V

VBEsat Base-emitter saturation voltage

IC=3A; IB=0.3A

1.2

V

ICBO

Collector cut-off current

VCB=200V; IE=0

0.1 mA

IEBO

Emitter cut-off current

VEB=8V; IC=0

0.1 mA

hFE-1

DC current gain

IC=0.6A ; VCE=4V

70

250

hFE-2

DC current gain

IC=3A ; VCE=4V

70

220

fT

Transition frequency

IE=-0.5A ; VCE=12V

30

MHz

COB

Collector output capacitance

固IN电C半H导AN体GE SEMICONDUCTOR Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

f=1MHz;VCB=10V

IC=3A

IB1=0.3A ,IB2=-0.6A

VCC=50V, RL=16.7Ω

110

0.5

3.0

0.5

pF

μs

μs

μs

2

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