2SC4655J Ver la hoja de datos (PDF) - Panasonic Corporation
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componentes Descripción
Lista de partido
2SC4655J Datasheet PDF : 3 Pages
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Transistors
2SC4655J
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
• Optimum for RF amplification, oscillation, mixing, and IF of
1.60+–00..0035
1.00±0.05
3
Unit: mm
0.12+–00..0013
FM/SAM radios
• SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
12
0.27±0.02
(0.50)(0.50)
/ ■ Absolute Maximum Ratings Ta = 25°C
5˚
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
30
V
c e. d ty Collector-emitter voltage (Base open) VCEO
20
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
5
V
a e cle con Collector current
IC
30
mA
lifecy , dis Collector power dissipation
PC
125
mW
n u duct typed Junction temperature
Tj
125
°C
te tin Pro ed Storage temperature
Tstg −55 to +125 °C
1 : Base
2 : Emitter
3 : Collector
Marking Symbol: K
EIAJ : SC-89
SSMini3-F1 Package
in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
Min Typ Max Unit
c d inc e typ Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
30
V
tinue anc Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
20
V
M is con inten Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
5
V
/Dis ma Forward current transfer ratio *
hFE VCE = 10 V, IC = 1 mA
70
250
D ance type, Transition frequency
fT
VCB = 10 V, IE = −1 mA, f = 200 MHz 150 230
MHz
ten ce Reverse transfer capacitance
Cre VCB = 10 V, IE = −1 mA, f = 10.7 MHz
1.3
pF
ain nan (Common emitter)
M inte Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
d ma 2. *: Rank classification
(plane Rank
B
C
hFE
70 to 160 110 to 250
Publication date: September 2004
SJC00314AED
1
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