2SC4691(2001) Ver la hoja de datos (PDF) - Panasonic Corporation
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Lista de partido
2SC4691 Datasheet PDF : 3 Pages
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Transistor
2SC4691
Silicon NPN epitaxial planer type
For high speed switching
s Features
q High-speed switching.
q Low collector to emitter saturation voltage VCE(sat).
q SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
40
V
Collector to emitter voltage VCES
40
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
300
mA
Collector current
IC
100
mA
Collector power dissipation PC
125
mW
Junction temperature
Tj
125
˚C
Storage temperature
Tstg
–55 ~ +125
˚C
0.2+–00..015
3
1
2
(0.5) (0.5)
1.0±0.1
1.6±0.1
5˚
Unit: mm
0.15+–00..015
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SSMini3-G1 Package
Marking symbol : 2Y
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Forward current transfer ratio
hFE*
VCB = 15V, IE = 0
VEB = 4V, IC = 0
VCE = 1V, IC = 10mA
0.1
µA
0.1
µA
60
200
Collector to emitter saturation voltage VCE(sat)
IC = 10mA, IB = 1mA
0.17 0.25
V
Base to emitter saturation voltage VBE(sat)
IC = 10mA, IB = 1mA
1.0
V
Transition frequency
fT
VCB = 10V, IE = –10mA, f = 200MHz
450
MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
2
6
pF
Turn-on time
ton
17
ns
Turn-off time
toff
Refer to the measurment circuit
17
ns
Storage time
tstg
10
ns
*hFE Rank classification
Rank
hFE
Marking Symbol
Q
60 ~ 120
2YQ
R
90 ~ 200
2YR
485
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