2SD1383K(2008) Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Lista de partido
2SD1383K Datasheet PDF : 3 Pages
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Transistors
zElectrical characteristic curves
125
100
75
50
25
0
0
25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta (°C)
Fig.1 Power dissipation curves
500
VCE=6V
200
100
50
20
10
5
2
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Ground emitter propagation characteristisc
2SD1383K
100
IB=10µA
Ta=25°C
9µA
8µA
7µA
50
6µA
5µA
4µA
0
3µA
0
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Ground emitter output characteristics
Ta=25°C
50000
5V
20000
10000
5000
VCE=3V
2000
1000
500
5 10 20 50 100 200 500 1000 2000
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current ( Ι )
VCE=5V
100000
50000
Ta=1002°5C°C
20000
−55°C
10000
5000
5 10 20 50 100 200 500 1000 2000
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs. collector current ( ΙΙ )
IC/IB=500
2
1
Ta= −55°C
0.5
100°C
25°C
0.2
0.1
0.5 1 2
5 100 200 500 1000 2000
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation voltage
vs. collector current
Ta=25°C
VCE=6V
500
200
100
50
−1 −2
−5 −10 −20 −50 −100
EMITTER CURRENT : IE (mA)
Fig.7 Gain bandwidth product vs. emitter current
Ta=25°C
f=1MHz
IE=0A
20
10
5
2
12
5 10 20
50
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.8 Collector output capacitance
vs. collector-base voltage
20
Ta=25°C
f=1MHz
10
IE=0A
5
2
1
1
2
5
10
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9 Emitter input capacitance
vs. emitter-base voltage
Rev.C
2/2
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