D1444 Ver la hoja de datos (PDF) - Inchange Semiconductor
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D1444 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1444 2SD1444A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
2SD1444
20
V(BR)CEO
Collector-emitter
breakdown voltage
IC=10mA , IB=0
V
2SD1444A
40
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.16A
0.6
V
VBEsat Base-emitter saturation voltage
IC=5A; IB=0.16A
1.5
V
ICBO
Collector
cut-off current
2SD1444 VCB=40V; IE=0
2SD1444A VCB=50V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
50
μA
50
μA
hFE-1
DC current gain
固IN电C半H导AN体GE SEMICONDUCTOR hFE-2
DC current gain
fT
Transition frequency
COB
Output capacitance
Switching times
IC=0.1A ; VCE=2V
IC=2A ; VCE=2V
IC=0.5A ; VCE=10V
IE=0 ; VCB=10V;f=1MHz
45
60
260
150
MHz
110
pF
ton
Turn-on time
0.3
μs
tstg
Storage time
IC=2A; IB1=-IB2=66mA
0.3
μs
tf
Fall time
0.1
μs
hFE-2 Classifications
R
Q
P
60-120 90-180 130-260
2
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