2SD875 Ver la hoja de datos (PDF) - KEXIN Industrial

Número de pieza

componentes Descripción

Lista de partido

2SD875

NPN Transistors

KEXIN Industrial 

SMD Type

NPN Transistors

2SD875

Transistors

■ Features

● Large collector power dissipation PC.

● High collector to emitter voltage VCEO.

● Complimentary to 2SB767

1.70 0.1

0.42 0.1

0.46 0.1

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

Symbol

Rating

Unit

VCBO

80

VCEO

80

V

VEBO

5

IC

0.5

A

ICP

1

PC

1

W

TJ

150

℃

Tstg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

Collector output capacitance

Transition frequency

Symbol

Test Conditions

VCBO Ic= 100 μA， IE= 0

VCEO Ic= 1 mA， IB= 0

VEBO IE= 100μA， IC= 0

ICBO VCB= 60V , IE= 0

IEBO VEB= 4V , IC=0

VCE(sat) IC=300 mA, IB=30mA

VBE(sat) IC=300 mA, IB=30mA

hFE(1) VCE= 10V, IC= 150mA

hFE(2) VCE= 5V, IC= 500mA

Cob VCB= 10V, IE= 0,f=1MHz

fT

VCE= 10V, IE= -50mA,f=200MHz

■ Classification of hfe(1)

Type

Range

Marking

2SD875-R

130-220

XR

2SD875-S

185-330

XS

1.Base

2.Collector

3.Emitter

Min Typ Max Unit

80

80

V

5

100

nA

100

0.2 0.4

V

0.85 1.2

130

330

50 100

11

pF

120

MHz

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