D826 Ver la hoja de datos (PDF) - Inchange Semiconductor
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D826 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD826
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEsat Collector-emitter saturation voltage IC=3A; IB=60mA(pulse)
0.5
V
VBEsat
ICBO
IEBO
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
IC=3A; IB=60mA(pulse)
VCB=50V; IE=0
VEB=5V; IC=0
1.5
V
1.0 μA
1.0 μA
hFE-1
DC current gain
IC=0.5A ; VCE=2V
120
560
hFE-2
DC current gain
IC=3A ; VCE=2V(pulse)
95
fT
Transition frequency
IC=50mA ; VCE=10V
120
MHz
COB
Collector output capacitance
f=1MHz ; VCB=10V
45
pF
Switching times
固IN电C半H导AN体GE SEMICONDUTOR ton
Turn-on time
30
tstg
Storage time
IC=2A ;IB1=-IB2=0.2A
VCC=10V; RL=5Ω
300
tf
Fall time
40
hFE-1 Classifications
ns
ns
ns
E
F
G
120-200 160-320 280-560
2
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