2SJ532 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

fabricante

2SJ532

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SJ532

Silicon P Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS(on) = 0.042Ω typ.

• Low drive current.

• 4V gate drive devices.

• High speed switching.

Outline

TO–220CFM

ADE-208-653B (Z)

3rd. Edition

Jun 1998

D

G

S

123

1. Gate

2. Drain

3. Source

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