2SJ542 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Lista de partido
2SJ542 Datasheet PDF : 9 Pages
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2SJ542
Silicon P Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 0.050Ω typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline
TO–220AB
ADE-208-591B (Z)
3rd. Edition
Jun 1998
D
G
S
1
2
3
1. Gate
2. Drain
(Flange)
3. Source
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