2SJ549 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
fabricante
2SJ549 Datasheet PDF : 9 Pages
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2SJ549(L),2SJ549(S)
Silicon P Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 0.11 Ω typ.
• Low drive current
• 4 V gete drive devices
• High speed switching
Outline
LDPAK
D
G
S
ADE-208-644A (Z)
2nd. Edition
Jun 1998
4
4
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
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