2SK2695-01 Ver la hoja de datos (PDF) - Fuji Electric
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2SK2695-01 Datasheet PDF : 3 Pages
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N-channel MOS-FET
700V 1,85Ω
±5A 60W
> Characteristics
Typical Output Characteristics
ID=f(VDS); 80µs pulse test; TC=25°C
2SK2695-01
FAP-IIIB Series
Drain-Source On-State Resistance vs. Tch
RDS(on) = f(Tch); ID=2,5A; VGS=10V
Typical Transfer Characteristics
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
↑
1
↑
2
↑
3
→ VDS [V]
Typical Drain-Source On-State-Resistance vs. ID
RDS(on)=f(ID); 80µs pulse test; TC=25°C
→ Tch [°C]
Typical Forward Transconductance vs. ID
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
→ VGS [V]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch); ID=1mA; VDS=VGS
↑
4
↑
5
↑
6
→ ID [A]
Typical Capacitances vs. VDS
C=f(VDS); VGS=0V; f=1MHz
↑
7
→ ID [A]
Typical Gate Charge Characteristic
VGS=f(Qg); ID=5A; TC=25°C
→ Tch [°C]
Forward Characteristics of Reverse Diode
IF=f(VSD); 80µs pulse test; VGS=0V
↑
8
↑↑
9
→ VDS [V]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch): VCC=24V; IAV ≤ 45A
→ Qg [nC]
Safe Operation Area
ID=f(VDS): D=0,01, Tc=25°C
↑
10
↑
12
↑
→ VSD [V]
Transient Thermal impedance
Zthch=f(t) parameter:D=t/T
→ starting Tch [°C]
→ VDS [V]
This specification is subject to change without notice!
t [s] →
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