ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Output Power
Drain Efficiency
Power Gain
Threshold Voltage
Drain Cut-off Current
Gate-Source Leakage Current
SYMBOL
TEST CONDITION
PO
ηD
GP
Vth
IDSS
IGSS
VDS = 4.8 V
Iidle = 108 mA (VGS = adjust)
f = 915 MHz, Pi = 14.5 dBmW
VDS = 4.8 V, ID = 0.5 mA
VDS = 10 V, VGS = 0 V
VGS = 5 V, VDS = 0 V
CAUTION
This transistor is the electrostatic sensitive device.
Please handle with caution.
RF OUTPUT POWER TEST FIXTURE
2SK3078
MIN TYP. MAX UNIT
27.0 ―
― dBmW
―
46.0 ―
%
12.5 ―
―
dB
0.20 ―
1.20 V
―
―
10 µA
―
―
5 µA
2
2001-12-26