30BQ100G Ver la hoja de datos (PDF) - Vishay Semiconductors
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30BQ100G Datasheet PDF : 6 Pages
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30BQ100GPbF
Vishay High Power Products Schottky Rectifier, 3 A
180
DC
160
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
140
Square wave (D = 0.50)
120 80% Rated Vr applied
see note (1)
100
0
1
2
3
4
5
Average Forward Current - I F(AV) (A)
Fig. 5 - Maximum Average Forward Current vs.
Allowable Lead Temperature
2.5
D = 0.75
D = 0.50
2 D = 0.33
D = 0.25
D = 0.20
1.5
RMS Limit
1
DC
0.5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Average Forward Current - I F(AV) (A)
Fig. 6 - Maximum Average Forward Dissipation vs.
Average Forward Current
1000
100
At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge
10
10
100
1000
10000
Square Wave Pulse Duration - Tp (Microsec)
Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR(1 - D); IR at VR1 = 80 % rated VR
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4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94506
Revision: 24-Apr-08
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