30BQ100TR Ver la hoja de datos (PDF) - Vishay Semiconductors
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30BQ100TR Datasheet PDF : 6 Pages
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30BQ100PbF
Vishay High Power Products Schottky Rectifier, 3 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
VFM (1)
Maximum reverse leakage current
IRM (1)
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
CT
LS
dV/dt
TEST CONDITIONS
3A
TJ = 25 °C
6A
3A
TJ = 125 °C
6A
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.79
0.90
0.62
0.70
0.5
5.0
115
3.0
10 000
UNITS
V
mA
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
RthJL (2)
RthJA
DC operation
Approximate weight
Marking device
Case style SMC (similar to DO-214AB)
Notes
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
(2) Mounted 1" square PCB
VALUES
- 55 to 175
UNITS
°C
12
°C/W
46
0.24
g
0.008
oz.
V3J
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94181
Revision: 16-Apr-08
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