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M29W010B55N6

1 Mbit (128Kb x8, Uniform Block) Low Voltage Single Supply Flash Memory

STMicroelectronics 

M29W010B

1 Mbit (128Kb x8, Uniform Block)

Low Voltage Single Supply Flash Memory

■ SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 45ns

■ PROGRAMMING TIME

– 10µs by Byte typical

■ 8 UNIFORM 16 Kbyte MEMORY BLOCKS

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: 23h

■ ECOPACK® PACKAGES AVAILABLE

PLCC32 (K)

TSOP32 (N)

8 x 20mm

Figure 1. Logic Diagram

VCC

17

A0-A16

8

DQ0-DQ7

W

M29W010B

E

G

VSS

AI02747

September 2005

1/19

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