M29F102BB35K1T Ver la hoja de datos (PDF) - STMicroelectronics
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M29F102BB35K1T Datasheet PDF : 24 Pages
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M29F102BB
1 Mbit (64Kb x16, Boot Block) Single Supply Flash Memory
FEATURES SUMMARY
■ SINGLE 5V±10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ
OPERATIONS
■ ACCESS TIME: 35ns
■ PROGRAMMING TIME
– 8µs per Word typical
■ 5 MEMORY BLOCKS
– 1 Boot Block (Bottom Location)
– 2 Parameter and 2 Main Blocks
■ PROGRAM/ERASE CONTROLLER
– Embedded Word Program algorithm
– Embedded Multi-Block/Chip Erase
algorithm
– Status Register Polling and Toggle Bits
■ ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■ TEMPORARY BLOCK UNPROTECTION
MODE
■ LOW POWER CONSUMPTION
– Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per
BLOCK
■ M28F102 COMPATIBLE
– Pin-out and Read Mode
■ 20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Bottom Device Code M29F102BB: 0097h
■ PACKAGES
– Compliant with Lead-Free Soldering
Processes
– Lead-Free Versions
Figure 1. Package
PLCC44 (K)
TSOP40 (N)
10 x 14mm
November 2004
1/24
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