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6N65

6.2A, 650V N-CHANNEL POWER MOSFET

Unisonic Technologies 

6N65

Power MOSFET

„ ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS VGS = 0V, ID = 250μA

650

V

Drain-Source Leakage Current

IDSS

VDS = 650V, VGS = 0V

10 μA

Forward

Gate- Source Leakage Current

Reverse

IGSS

VGS = 30V, VDS = 0V

VGS = -30V, VDS = 0V

Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C

ON CHARACTERISTICS

100 nA

-100 nA

0.53

V/°C

Gate Threshold Voltage

VGS(TH) VDS = VGS, ID = 250μA

2.0

4.0 V

Static Drain-Source On-State Resistance

RDS(ON) VGS = 10V, ID = 3.1A

1.1 1.7 Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

CISS

COSS

CRSS

VDS=25V, VGS=0V,

f=1.0 MHz

770 1000 pF

95 120 pF

10 13 pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

20 50 ns

Turn-On Rise Time

Turn-Off Delay Time

tR

tD(OFF)

VDD=325V, ID =6.2A,

RG =25Ω (Note 1, 2)

70 150 ns

40 90 ns

Turn-Off Fall Time

tF

45 100 ns

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

QG

QGS

QGD

VDS=520V, ID=6.2A,

VGS=10V (Note 1, 2)

20 25 nC

4.9

nC

9.4

nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

Maximum Continuous Drain-Source Diode

Forward Current

VSD

VGS = 0 V, IS = 6.2 A

IS

1.4 V

6.2 A

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

24.8 A

Reverse Recovery Time

tRR

VGS = 0 V, IS = 6.2 A,

Reverse Recovery Charge

QRR

dIF/dt = 100 A/μs (Note 1)

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%

290

ns

2.35

μC

2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 6

QW-R502-589.B

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