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74LVC1G58 Datasheet PDF : 15 Pages
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74LVC1G58
CONFIGURABLE MULTIPLE-FUNCTION GATE
Electrical Characteristics (All typical values are at VCC = 3.3V, TA = +25°C)
Symbol
Parameter
CI
Input Capacitance
Test Conditions
VI = VCC – or GND
SOT26
VCC
Min
Typ
Max
Unit
3.3
3.5
pF
204
Thermal Resistance Junction- SOT363
θJA
to-Ambient
X2-DFN1410-6
(Note 6)
371
oC/W
430
X2-DFN1010-6
510
SOT26
52
Thermal Resistance Junction- SOT363
θJC
to-Case
X2-DFN1410-6
(Note 6)
143
oC/W
190
X2-DFN1010-6
250
Notes:
6. Test condition for SOT26, SOT363, X2-DFN1410-6 and X2-DFN1010-6: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum
recommended pad layout.
Switching Characteristics
TA = -40°C to +85°C, CL = 30 or 50pF as noted (see Figure 1)
Parameter
From
(Input)
TO
(OUTPUT)
VCC = 1.8V
± 0.15V
Min Max
VCC = 2.5V
± 0.2V
Min Max
VCC = 3.3V
± 0.3V
Min Max
VCC = 5V
± 0.5V
Min Max
Unit
tpd
Any
Y
1.0
14.4
0.7
8.3
0.7
6.3
0.7
5.1
ns
TA = -40°C to +125°C, CL = 30 or 50pF as noted (see Figure 1)
Parameter
From
(Input)
VCC = 1.8V
VCC = 2.5V
VCC = 3.3V
VCC = 5V
TO
± 0.15V
± 0.2V
± 0.3V
± 0.5V
Unit
(OUTPUT)
Min Max Min Max Min Max Min Max
tpd
Any
Y
1.0
18.0
0.7
10.4
0.7
7.9
0.7
6.4
ns
Operating Characteristics
TA = +25°C
Parameter
Power dissipation
Cpd
capacitance
Test
Conditions
f = 10 MHz
VCC = 1.8V
Typ.
22
VCC = 2.5V
Typ.
22
VCC = 3.3V
Typ.
23
VCC = 5V
Typ.
24
Unit
pF
74LVC1G58
Document number DS35126 Rev. 4 - 2
7 of 15
www.diodes.com
June 2012
© Diodes Incorporated
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