XP133A0245SR(V2) Ver la hoja de datos (PDF) - TOREX SEMICONDUCTOR

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XP133A0245SR
(Rev.:V2)

Power MOSFET

TOREX SEMICONDUCTOR 

Power MOS FET

NN-Channel Power MOS FET

NDMOS Structure

NLow On-State Resistance : 0.012 Ω (max)

NUltra High-Speed Switching

NSOP-8 Package

■General Description

The XP131A1715SR is an N-Channel Power MOS FET with low on-

state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set

thereby saving energy.

The small SOP-8 package makes high density mounting possible.

■Applications

GNotebook PCs

GCellular and portable phones

GOn-board power supplies

GLi-ion battery systems

■Features

Low on-state resistance : Rds (on) = 0.012Ω ( Vgs = 4.5V )

: Rds (on) = 0.015Ω ( Vgs = 2.5V )

: Rds (on) = 0.025Ω ( Vgs = 1.5V )

Ultra high-speed switching

Operational Voltage : 1.5V

High density mounting : SOP-8

■Pin Configuration

S１

S２

S３

G４

８D

７D

６D

５D

SOP-8

（TOP VIEW）

■Equivalent Circuit

１

８

２

７

３

６

４

５

N-Channel MOS FET

( 1 device built-in )

■Pin Assignment

PIN NUMBER

1〜3

4

5〜8

PIN NAME

Ｓ

Ｇ

Ｄ

FUNCTION

Source

Gate

Drain

11

■Absolute Maximum Ratings

Ta=25OC

PARAMETER

SYMBOL RATINGS

UNITS

Drain - Source Voltage

Vdss

20

V

Gate - Source Voltage

Vgss

+8

V

Drain Current (DC)

Id

10

A

Drain Current (Pulse)

Idp

40

A

Reverse Drain Current

Idr

10

A

Continuous Channel

Pd

2.5

W

Power Dissipation (note)

Channel Temperature

Tch

150

OC

Storage Temperature

Tstg

-55 ~ 150

OC

( note ) : When implemented on a glass epoxy PCB

711

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