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A29L040-70F Datasheet PDF : 30 Pages
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A29L040 Series
512K X 8 Bit CMOS 3.0 Volt-only,
Uniform Sector Flash Memory
Features
„ Single power supply operation
- Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
- Regulated voltage range: 3.0 to 3.6 volt read and write
operations for compatibility with high performance 3.3
volt microprocessors
„ Access times:
- -55(Vcc: 3.0 ~ 3.6V) / -70 (max.)
„ Current:
- 4 mA typical active read current
- 20 mA typical program/erase current
- 1 nA typical CMOS standby current
„ Flexible sector architecture
- 8 uniform sectors of 64 Kbyte each
- Any combination of sectors can be erased
- Supports full chip erase
- Sector protection:
A hardware method of protecting sectors to prevent
any inadvertent program or erase operations within that
sector
„ Embedded Erase Algorithms
- Embedded Erase algorithm will automatically erase the
entire chip or any combination of designated sectors
and verify the erased sectors
General Description
The A29L040 is a 3.0 volt-only Flash memory organized as
524,288 bytes of 8 bits each. The 512 Kbytes of data are
further divided into eight sectors of 64 Kbytes each for
flexible sector erase capability. The 8 bits of data appear on
I/O0 - I/O7 while the addresses are input on A0 to A18. The
A29L040 is offered in 32-pin PLCC, TSOP (8mm x 20mm) or
sTSOP (8mm x 13.4mm) packages. This device is designed
to be programmed in-system with the standard system 3.0
volt VCC supply. Additional 12.0 volt VPP is not required for
in-system write or erase operations. However, the A29L040
can also be programmed in standard EPROM programmers.
The A29L040 has a second toggle bit, I/O2, to indicate
whether the addressed sector is being selected for erase,
and also offers the ability to program in the Erase Suspend
mode. The standard A29L040 offers access times of 70ns,
allowing high-speed microprocessors to operate without wait
states. To eliminate bus contention the device has separate
chip enable ( CE ), write enable ( WE ) and output enable
( OE ) controls.
The device requires only a single 3.0 volt power supply for
both read and write functions. Internally generated and
regulated voltages are provided for the program and erase
operations.
The A29L040 is entirely software command set compatible
with the JEDEC single-power-supply Flash standard.
Commands are written to the command register using
standard microprocessor write timings. Register contents
- Embedded Program algorithm automatically writes and
verifies bytes at specified addresses
„ Minimum 100,000 program/erase cycles per sector
„ 20-year data retention at 125°C
- Reliable operation for the life of the system
„ Compatible with JEDEC-standards
- Pinout and software compatible with single-power-
supply Flash memory standard
- Superior inadvertent write protection
„ Data Polling and toggle bits
- Provides a software method of detecting completion of
program or erase operations
„ Erase Suspend/Erase Resume
- Suspends a sector erase operation to read data from,
or program data to, a non-erasing sector, then
resumes the erase operation
„ Package options
- 32-pin DIP, PLCC, TSOP (8mm x 20mm), sTSOP
(8mm x 13.4mm), sTSOP (8mm x 14mm)
- All Pb-free (Lead-free) products are RoHS compliant
serve as input to an internal state-machine that controls the
erase and programming circuitry. Write cycles also internally
latch addresses and data needed for the programming and
erase operations. Reading data out of the device is similar to
reading from other Flash or EPROM devices.
Device programming occurs by writing the proper program
command sequence. This initiates the Embedded Program
algorithm - an internal algorithm that automatically times the
program pulse widths and verifies proper program margin.
Device erasure occurs by executing the proper erase
command sequence. This initiates the Embedded Erase
algorithm - an internal algorithm that automatically
preprograms the array (if it is not already programmed)
before executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper erase margin.
The host system can detect whether a program or erase
operation is complete by reading the I/O7 ( Data Polling) and
I/O6 (toggle) status bits. After a program or erase cycle has
been completed, the device is ready to read array data or
accept another command.
The sector erase architecture allows memory sectors to be
erased and reprogrammed without affecting the data
contents of other sectors. The A29L040 is fully erased when
shipped from the factory.
The hardware sector protection feature disables operations
for both program and erase in any combination of the sectors
(September, 2011, Version 1.6)
1
AMIC Technology, Corp.

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