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A43L8316AV-5

128K X 16 Bit X 2 Banks Synchronous DRAM

AMIC Technology 

A43L8316A

Device Operations (continued)

Bank Activate

The bank activate command is used to select a random row

in an idle bank. By asserting low on RAS and CS with

desired row and bank addresses, a row access is initiated.

The read or write operation can occur after a time delay of

tRCD(min) from the time of bank activation. tRCD(min) is an

internal timing parameter of SDRAM, therefore it is

dependent on operating clock frequency. The minimum

number of clock cycles required between bank activate and

read or write command should be calculated by dividing

tRCD(min) with cycle time of the clock and then rounding off

the result to the next higher integer. The SDRAM has two

internal banks on the same chip and shares part of the

internal circuitry to reduce chip area, therefore it restricts

the activation of both banks immediately. Also the noise

generated during sensing of each bank of SDRAM is high

requiring some time for power supplies recover before the

other bank can be sensed reliably. tRRD(min) specifies the

minimum time required between activating different banks.

The number of clock cycles required between different bank

activation must be calculated similar to tRCD specification.

The minimum time required for the bank to be active to

initiate sensing and restoring the complete row of dynamic

cells is determined by tRAS(min) specification before a

precharge command to that active bank can be asserted.

The maximum time any bank can be in the active state is

determined by tRAS(max). The number of cycles for both

tRAS(min) and tRAS(max) can be calculated similar to tRCD

specification.

Burst Read

The burst read command is used to access burst of data on

consecutive clock cycles from an active row in an active

bank. The burst read command is issued by asserting low

on CS and CAS with WE being high on the positive edge

of the clock. The bank must be active for at least tRCD(min)

before the burst read command is issued. The first output

appears CAS latency number of clock cycles after the issue

of burst read command. The burst length, burst sequence

and latency from the burst read command is determined by

the mode register which is already programmed. The burst

read can be initiated on any column address of the active

row. The address wraps around if the initial address does

not start from a boundary such that number of outputs from

each I/O are equal to the burst length programmed in the

mode register. The output goes into high-impedance at the

end of the burst, unless a new burst read was initiated to

keep the data output gapless. The burst read can be

terminated by issuing another burst read or burst write in

the same bank or the other active bank or a precharge

command to the same bank. The burst stop command is

valid at every page burst length.

Burst Write

The burst write command is similar to burst read command,

and is used to write data into the SDRAM consecutive clock

cycles in adjacent addresses depending on burst length and

burst sequence. By asserting low on CS , CAS and WE with

valid column address, a write burst is initiated. The data

inputs are provided for the initial address in the same clock

cycle as the burst write command. The input buffer is

deselected at the end of the burst length, even though the

internal writing may not have been completed yet. The writing

can not complete to burst length. The burst write can be

terminated by issuing a burst read and DQM for blocking data

inputs or burst write in the same or the other active bank. The

burst stop command is valid only at full page burst length

where the writing continues at the end of burst and the burst

is wrap around. The write burst can also be terminated by

using DQM for blocking data and precharging the bank “tRDL”

after the last data input to be written into the active row. See

DQM OPERATION also.

DQM Operation

The DQM is used to mask input and output operation. It

works similar to OE during read operation and inhibits writing

during write operation. The read latency is two cycles from

DQM and zero cycle for write, which means DQM masking

occurs two cycles later in the read cycle and occurs in the

same cycle during write cycle. DQM operation is synchronous

with the clock, therefore the masking occurs for a complete

cycle. The DQM signal is important during burst interrupts of

write with read or precharge in the SDRAM. Due to

asynchronous nature of the internal write, the DQM operation

is critical to avoid unwanted or incomplete writes when the

complete burst write is not required.

Precharge

The precharge operation is performed on an active bank by

asserting low on CS , RAS , WE and A8/AP with valid BA

of the bank to be precharged. The precharge command can

be asserted anytime after tRAS(min) is satisfied from the bank

activate command in the desired bank. “tRP” is defined as the

minimum time required to precharge a bank.

The minimum number of clock cycles required to complete

row precharge is calculated by dividing “tRP” with clock cycle

time and rounding up to the next higher integer. Care should

be taken to make sure that burst write is completed or DQM

is used to inhibit writing before precharge command is

asserted. The maximum time any bank can be active is

specified by tRAS(max). Therefore, each bank has to be

precharged within tRAS(max) from the bank activate

command. At the end of precharge, the bank enters the idle

state and is ready to be activated again.

Entry to Power Down, Auto refresh, Self refresh and Mode

register Set etc, is possible only when both banks are in

idle state.

(September, 2003, Version 1.0)

13

AMIC Technology, Corp.

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