A43L2616AV-7 Ver la hoja de datos (PDF) - AMIC Technology

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A43L2616AV-7

1M X 16 Bit X 4 Banks Synchronous DRAM

AMIC Technology 

Page Read & Write Cycle at Same Bank @Burst Length=4

A43L2616A

0

CLOCK

CKE

CS

RAS

CAS

1

2

3

4

5

6

7

8

9

10 11 12 13 14 15 16 17 18 19

High

tRCD

*Note 2

ADDR

Ra

Ca

Cb

Cc

Cd

BS0

BS1

A10/AP

Ra

WE

DQM

DQ

(CL=2)

*Note 2

*Note1

tCDL

tRDL

*Note3

Qa0 Qa1 Qb0 Qb1 Qb2

Dc0 Dc1 Dd0 Dd1

DQ

(CL=3)

Qa0 Qa1 Qb0 Qb1

Dc0 Dc1 Dd0 Dd1

Row Active

(A-Bank)

Read

(A-Bank)

Read

(A-Bank)

Write

(A-Bank)

Write

(A-Bank)

Precharge

(A-Bank)

*Note : 1. To write data before burst read ends, DQM should be asserted three cycle prior to write

command to avoid bus contention.

2. Row precharge will interrupt writing. Last data input, tRDL before Row precharge, will be written.

3. DQM should mask invalid input data on precharge command cycle when asserting precharge

before end of burst. Input data after Row precharge cycle will be masked internally.

: Don't care

PRELIMINARY (November, 2004, Version 0.0)

25

AMIC Technology, Corp.

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