ACT-D4M32A-100F1C Ver la hoja de datos (PDF) - Aeroflex Corporation
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ACT-D4M32A-100F1C Datasheet PDF : 5 Pages
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General Description
Utilizing AMD’s Sector Erase Flash Memory Die, the ACT-F4M32A is a high speed, 128
megabit CMOS flash multichip module (MCM) designed for full temperature range, military,
space, or high reliability applications.
The ACT-F4M32A consists of eight high-performance AMD Am29F016 16Mbit
(16,777,216 bit) memory die. Each die contains 8 separately write or erase sector groups
of 256Kbytes (A sector group consists of 4 adjacent sectors of 64Kbytes each).
The command register is written by bringing WE to a logic low level (VIL), while CE is
low and OE is high (VIH). Reading is accomplished by chip Enable (CE) and Output Enable
(OE) being logically active. Access time grades of 100ns, 120ns and 150ns maximum are
standard.
The ACT-F4M32A is offered in two different hermetically sealed co-fired 68 lead
ceramic packages. This allows operation in a military environment temperature range of
-55°C to +125°C.
The ACT-F4M32A can be programmed (both read and write functions) in-system using
the +5.0V VCC power supply. A 12.0V VPP is not required for programming or erase
operations. The end of program or erase is detected by the RY/BY pin, Data Polling of
DQ7, or by the Toggle bit (DQ6).
The ACT-F4M32A also has a hardware RESET pin. When this pin is driven low,
execution of any Embedded Program Alggorithm or Embedded Erase Algorithm will be
terminated.
Each block can be independently erased and programmed 100,000 times at +25°C.
For Detail Information regarding the operation of the Am29F016 Sector Erase Flash
Memory, see the AMD datasheet (Publication 18805).
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