ACT-E1M32 Ver la hoja de datos (PDF) - Aeroflex Corporation
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ACT-E1M32 Datasheet PDF : 9 Pages
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DC Characteristics – CMOS Compatible
(TA = -55°C to +125°C, VCC = +4.5V to + 5.5V(5V Operation), or +3.0V to +3.6V(3.3V Operation), Unless otherwise specified)
Parameter
Sym
Conditions
VPP Deep Power Down Current
VPP Read Current
VPP Write Current
VPP Erase Current
VPP Erase Suspend Current
RP Boot Block Unlock Current
Output Low Voltage
Output High Voltage
IPPD
IPPR
IPPW1
IPPW2
IPPE1
IPPE2
IPPES
IRP
VOL
VOH1
RP = GND ± 0.2V
VPP > VPPH2
VPP = VPPH1 (at 5V), Word Write in Progress (x32)
VPP = VPPH2 (at 12V), Word Write in Progress (x32)
VPP = VPPH1 (at 5V), Block Erase in Progress
VPP = VPPH2 (at 12V), Block Erase in Progress
VPP = VPPH, Block Erase Suspend in Progress
RP = VHH, VPP = 12V
VCC = VCCMin., IOL = 5.8 mA (5V), 2 mA (3.3V)
VCC = VCCMin., IOH = -2.5 mA
VOH2 VCC = VCCMin., IOH = -100 µA
VPP Lock-Out Voltage
VPPLK Complete Write Protection
VPP (Program/Erase Operations) VPPH1 VPP = at 5V
VPP (Program/Erase Operations) VPPH2 VPP = at 12V
VCC Erase/Write Lock Voltage
VLKO Locked Condition
RP Unlock Voltage
VHH Boot Block Write/Erase, VPP = 12V
Notes:
1. Performance at VCC = +4.5V to +5.5V is guaranteed. Performance at VCC = +3.3V is typical (Not tested).
+3.3V VCC (1)
Typical
Min Max
40
800
120
100
120
100
800
2
0.45
0.85 x
VCC
VCC -
0.4V
0.0 1.5
4.5 5.5
11.4 12.6
0
2.0
11.4 12.6
+5.0V VCC
Standard
Min Max
40
800
120
100
100
80
800
2
0.45
0.85 x
VCC
VCC -
0.4V
0.0 1.5
4.5 5.5
11.4 12.6
0
2.0
11.4 12.6
Units
µA
µA
mA
mA
mA
mA
µA
mA
V
V
V
V
V
V
V
V
AC Characteristics – Write/Erase/Program Operations – WE Controlled
(TA = -55°C to +125°C, VCC = +4.5V to + 5.5V(5V Operation), or +3.0V to +3.6V(3.3V Operation), Unless otherwise specified)
Parameter
Symbol
JEDEC
Standard
+3.3V VCC (2)
Typical
120nS
Min Max
+4.5V to +5.5V VCC
80nS
100nS
120nS
Min Max Min Max Min Max
Write Cycle Time
tAVAV
120
80
100
120
RP High Recovery to WE Going Low
tPHWL
1.5
.45
.45
.45
CE Setup to WE Going Low
tELWL
0
0
0
0
Boot Block Unlock Setup to WE Going High(1)
tPHHWH
200
100
100
100
VPP Setup to WE Going High (1)
tVPWH
200
100
100
100
Address Setup to WE Going High
tAVWH
90
60
60
60
Data Setup to WE Going High
tDVWH
70
60
60
60
WE Pulse Width
tWLWH
90
60
60
60
Data Hold Time from WE High
tWHDX
0
0
0
0
Address Hold Time from WE High
tWHAX
0
0
0
0
CE Hold Time from WE High
tWHEH
0
0
0
0
WE Pulse Width High
tWHWL
30
20
20
20
Duration of Word Write Operation (1) (x32)
tWHQV1
6
6
6
6
Duration of Erase Operation (Boot) (1)
tWHQV2
0.3
0.3
0.3
0.3
Duration of Erase Operation (Parameter) (1)
tWHQV3
0.3
0.3
0.3
0.3
Duration of Erase Operation (Main) (1)
VPP Hold from Valid SRD (1)
RP VHH Hold from Valid SRD (1)
Boot Block Lock Delay (1)
tWHQV4
tQVVL
tQVPH
tPHBR
0.6
0.6
0.6
0.6
0
0
0
0
0
0
0
0
200
100
100
100
Notes:
1. Guaranteed by design, not tested.
2. Performance at VCC = +4.5V to +5.5V is guaranteed. Performance at VCC = +3.3V is typical (Not tested).
Units
nS
µS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
µS
Sec
Sec
Sec
nS
nS
nS
Aeroflex Circuit Technology
4
SCD1661B REV A 1/16/97 Plainview NY (516) 694-6700
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