ACT-SF2816 Ver la hoja de datos (PDF) - Aeroflex Corporation
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ACT-SF2816 Datasheet PDF : 11 Pages
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ACT–SF2816 High Speed
128Kx16 SRAM / 512Kx16 FLASH
Multichip Module
FEATURES
CIRCUIT TECHNOLOGY
www.aeroflex.com
I 2 – 128K x 8 SRAMs & 2 – 512K x 8 Flash Die in
One MCM
I Access Times of 25ns (SRAM) and 60ns (Flash)
or 35ns (SRAM) and 70 or 90ns (Flash)
I Organized as 128K x 16 of SRAM and 512K x 16
of Flash Memory with Separate Data Buses
I Both Blocks of Memory are User Configurable as
512KX8 AND 1MX8 Respectively
I Low Power CMOS
I Input and Output TTL Compatible Design
I MIL-PRF-38534 Compliant MCMs Available
I Decoupling Capacitors and Multiple Grounds for
Low Noise
I Industrial and Military Temperature Ranges
I Industry Standard Pinouts
Note: Programming information available upon request
I Packaging – Hermetic Ceramic
G 66 Pin, 1.08" x 1.08" x .160" PGA Type, No Shoulder,
Aeroflex code# "P3"
G 66 Pin, 1.08" x 1.08" x .185" PGA Type, With
Shoulder, Aeroflex code# "P7"
G 68 Lead, .94" x .94" x .140" Single-Cavity Small
Outline Gull Wing, Aeroflex code# "F18" (Drops into
the 68 Lead JEDEC .99"SQ CQFJ footprint)
I DESC SMD – TBD
FLASH MEMORY FEATURES
I Sector Architecture (Each Die)
G 8 Equal Sectors of 64K bytes each
G Any combination of sectors can be erased with one
command sequence
I +5V Programing, +5V Supply
I Embedded Erase and Program Algorithms
I Hardware and Software Write Protection
I Internal Program Control Time.
I 10,000 Erase / Program Cycles
Block Diagram – PGA Type Packages (P3 & P7) & CQFP (F18)
SWE1 SCE1 SWE2 SCE2 FWE1 FCE1 FWE2 FCE2
OE
A0 – A18
128Kx8
SRAM
128Kx8
SRAM
512Kx8
Flash
512Kx8
Flash
8
SI/O0-7
8
SI/O8-15
8
FI/O0-7
8
FI/O8-15
Pin Description
FI/O0-15 Flash Data I/O
SI/O0-15 SRAM Data I/O
A0–18
Address Inputs
FWE1-2 Flash Write Enables
SWE1-2 SRAM Write Enables
FCE1-2 Flash Chip Enables
SCE1-2 SRAM Chip Enables
OE
Output Enable
NC
Not Connected
VCC
Power Supply
GND
Ground
eroflex Circuit Technology - Advanced Multichip Modules © SCD3853 REV B 5/18/99
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