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TDA4866 Ver la hoja de datos (PDF) - Philips Electronics

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TDA4866 Datasheet PDF : 20 Pages
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Philips Semiconductors
Full bridge current driven vertical deflection
booster
Product specification
TDA4866
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-mb)
thermal resistance from junction to mounting base
TDA4866 (SIL version)
TDA4866J (DBS version)
CONDITIONS VALUE UNIT
note 1
4
K/W
4
K/W
Note
1. To minimize the thermal resistance from mounting base to heatsink [Rth(mb-h)] (DBS version) follow the
recommended mounting instruction: screw mounting preferred; torque = 40 Ncm; use heatsink compound.
CHARACTERISTICS
VP = 15 V; Tamb = 25 °C; VFB = 40 V; voltages referenced to pin 5 (GND); parameters are measured in test circuit
(see Fig.6); unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VP
supply voltage (pin 3)
VFB
flyback supply voltage (pin 7)
note 1
IFB
quiescent feedback current (pin 7)
no load; no signal
Input stage
Iid(p-p)
differential input current (Iid = I1 I2)
(peak-to-peak value)
I1, 2(p-p)
single ended input current
(peak-to-peak value)
note 2
CMRR
V1
V2
TCi,1
TCi,2
V1 V2
I9
V9
Iid(offset)
Ci INA
Ci INB
common mode rejection ratio
note 3
input clamp voltage
input clamp voltage
I1 = 300 µA
I2 = 300 µA
input clamp signal TC on pin 1
input clamp signal TC on pin 2
differential input voltage
Iid = 0
feedback current
feedback voltage
differential input offset current
(Iid(offset) = I1 I2)
Idefl = 0; Rref = 1.5 k;
Rm = 1
input capacity pin 1 referenced to GND
input capacity pin 2 referenced to GND
Output stages A and B
I4
output current
I6
output current
V6
output A saturation voltage to GND I6 = 0.7 A
I6 = 1.0 A
V6,3
output A saturation voltage to VP
I6 = 0.7 A
I6 = 1.0 A
V4
output B saturation voltage to GND I4 = 0.7 A
I4 = 1.0 A
MIN.
8.2
VP + 6
0
2.7
2.7
0
0
0
1
0
TYP.
7
±500
±300
54
3.0
3.0
±500
1.3
1.6
2.3
2.7
1.3
1.6
MAX.
25
60
10
UNIT
V
V
mA
±600 µA
±600 µA
3.3
3.3
±800
±800
±10
±600
VP 1
±20
dB
V
V
µV/K
µV/K
mV
µA
V
µA
5
pF
5
pF
±1
A
±1
A
1.5
V
1.8
V
2.9
V
3.3
V
1.5
V
1.8
V
2001 Aug 07
6

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