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ADF4193(RevB) Ver la hoja de datos (PDF) - Analog Devices

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ADF4193 Datasheet PDF : 28 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
AVDD to GND
AVDD to DVDD, SDVDD
VP to GND
VP to AVDD
Digital I/O Voltage to GND
Analog I/O Voltage to GND
REFIN, RFIN+, RFIN− to GND
Operating Temperature Range
Industrial (B Version)
Storage Temperature Range
Maximum Junction Temperature
LFCSP θJA Thermal Impedance
(Paddle Soldered)
Reflow Soldering
Peak Temperature
Time at Peak Temperature
Rating
–0.3 V to +3.6 V
–0.3 V to +0.3 V
–0.3 V to +5.8 V
–0.3 V to +5.8 V
–0.3 V to VDD + 0.3 V
–0.3 V to VP + 0.3 V
–0.3 V to VDD + 0.3 V
–40°C to +85°C
–65°C to +125°C
150°C
27.3°C/W
260°C
40 sec
ADF4193
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <2 kV, and it is ESD sensitive. Proper precautions
need to be taken for handling and assembly.
Transistor Count
75,800 (MOS), 545 (BJT)
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. B | Page 5 of 28

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