PDM31564 Ver la hoja de datos (PDF) - Paradigm Technology

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PDM31564

256K x 16 CMOS 3.3V Static RAM

Paradigm Technology 

PRELIMINARY

PDM31564

NOTES:

1. Parameter is determined by device characterization and is not production tested. See Figure 2 for load conditions.

2. If the CE LOW transition occurs coincident with or after the WE LOW transition, outputs remain in a high imped-

ance state.

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3. If the CE HIGH transition occurs coincident with or after the WE HIGH transition, outputs remain in a high imped-

ance state.

4. If OE is HIGH during a write cycle, the outputs are in a high-impedance state during this period.

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Ordering Information

XXXXX

Device Type

X

Power

XX

X

X

Speed Package Process

Type Temp. Range

X

Preferred

Shipping

Container

Blank Tubes

TR Tape & Reel

TY Tray

Blank Commercial (0° to +70°C)

I

Industrial (–40°C to +85°C)

A Automotive ( –40°C to +105°C)

SO 44-pin 400-mil Plastic SOJ

T 44-pin Plastic TSOP (II)

8 Commercial Only

10 Commercial Only

12

15

20

SA Standard Power

PDM31564 - (256Kx16) Static RAM

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10

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Rev. 1.2 - 3/31/98

Faster Memories for a FasterWorld ™

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