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HYB514256BJ-70

256 K × 4-Bit Dynamic RAM Low Power 256 K × 4-Bit Dynamic RAM

Infineon Technologies 

HYB 514256B/BL/BJ/BJL-50/-60/-70

256 K × 4-DRAM

AC Characteristics (cont’d) 4) 13)

TA = 0 to 70 ˚C; VCC = 5 V ± 10 %; tT = 5 ns

Parameter

Symbol

-50

min. max.

CAS precharge time (CAS- tCPT

before-RAS counter test

cycle)

25 –

OE access time

tOEA

RAS hold time referenced to tROH

OE

– 15

10 –

Output buffer turn-off delay tOEZ

time from OE

Data to CAS low delay 14)

tDZC

CAS high to data delay 15)

tDZO

OE high to data delay 15)

tCDD

OE to data delay 15)

tODD

0 15

0–

0–

15 –

15 –

Limit Values

-60

min. max.

30 –

-70

min. max.

40 –

– 15

10 –

0 20

0–

0–

20 –

20 –

– 20

10 –

0 20

0–

0–

20 –

20 –

Unit

ns

ns

ns

ns

ns

ns

ns

Capacitance

TA = 0 to 70 ˚C; VCC = 5 V ± 10 %; f = 1 MHz

Parameter

Input capacitance (A0 to A8)

Input capacitance (RAS, CAS, WE, OE)

Output capacitance (I/O1 ... I/O4)

Symbol

CI1

CI2

C5O

Limit Values

min.

max.

–

5

–

7

–

7

Unit

pF

pF

pF

Semiconductor Group

63

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