2SD2153 Ver la hoja de datos (PDF) - ROHM Semiconductor
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2SD2153 Datasheet PDF : 3 Pages
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High gain amplifier transistor (25V, 2A)
2SD2153
Features
1) Low saturation voltage,
typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA
2) Excellent DC current gain characteristics.
Dimensions (Unit : mm)
4.0
1.0
2.5 0.5
(1)
(2)
(3)
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
VCBO
30
VCEO
25
VEBO
6
2
IC
3
Collector power dissipation
0.5
PC
2 ∗2
Junction temperature
Storage temperature
Tj
150
Tstg
−55 to +150
∗1 Single pulse, Pw=10ms
∗2 Mounted on a 40+ 40+ t0.7mm Ceramic substrate
Unit
V
V
V
A(DC)
A(Pulse) ∗1
W
°C
°C
Packaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
∗ Denotes hFE
2SD2153
MPT3
UVW
DN ∗
T100
1000
Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
BVCBO
30
−
−
V
IC = 50μA
Collector-emitter breakdown voltage
BVCEO
25
−
−
V
IC = 1mA
Emitter-base breakdown voltage
BVEBO
6
−
−
V
IE = 50μA
Collector cutoff current
ICBO
−
−
0.5
μA VCB = 20V
Emitter cutoff current
IEBO
−
−
0.5
μA VEB = 5V
Collector-emitter saturation voltage
VCE(sat)
−
0.12
0.5
V
IC/IB = 1A/20mA
∗
DC current transfer ratio
hFE
820
−
1800
−
VCE/IC = 6V/0.5A
Transition frequency
fT
−
110
−
MHz VCE = 10V , IE = −10mA , f= 100MHz
Output capacitance
Cob
−
22
−
pF VCB = 10V , IE = 0A , f = 1MHz
∗ Measured using pulse current.
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○c 2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.B
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