AO3413(2010) Ver la hoja de datos (PDF) - Alpha and Omega Semiconductor
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AO3413 Datasheet PDF : 5 Pages
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AO3413
20V P-Channel MOSFET
General Description
The AO3413 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
Features
VDS = -20V
ID = -3A
RDS(ON) < 80mΩ
RDS(ON) < 100mΩ
RDS(ON) < 130mΩ
(VGS = -4.5V)
(VGS =- 4.5V)-15
(VGS = -2.5V)
(VGS = -1.8V)
SOT23
Top View
Bottom View
D
D
D
S
G
G
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current A
TA=25°C
TA=70°C
ID
Pulsed Drain Current B
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
-20
±8
-3
-2.4
-15
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A Steady-State
RθJA
70
100
Maximum Junction-to-Lead C Steady-State
RθJL
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 9: July 2010
www.aosmd.com
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