AOC2401 Ver la hoja de datos (PDF) - Alpha and Omega Semiconductor

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AOC2401

30V P-Channel MOSFET

Alpha and Omega Semiconductor 

AOC2401

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSS

VGS(th)

Gate-Body leakage current

Gate Threshold Voltage

RDS(ON) Static Drain-Source On-Resistance

gFS

Forward Transconductance

VSD

Diode Forward Voltage

ID=-250µA, VGS=0V

-30

V

VDS=-30V, VGS=0V

TJ=55°C

-1

µA

-5

VDS=0V, VGS=±12V

±10 µA

VDS=VGS ID=-250µA

-0.6 -0.93 -1.3

V

VGS=-10V, ID=-1.5A

TJ=125°C

34

41

mΩ

47.5 58

VGS=-4.5V, ID=-1A

37

47 mΩ

VGS=-2.5V, ID=-1A

44

58 mΩ

VDS=-5V, ID=-1.5A

12

S

IS=-1A,VGS=0V

-0.68 -1

V

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=-15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

1327

pF

158

pF

102

pF

15.5

Ω

SWITCHING PARAMETERS

Qg(10V) Total Gate Charge

Qg(4.5V)

Qgs

Total Gate Charge

Gate Source Charge

VGS=-10V, VDS=-15V, ID=-1.5A

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

VGS=-10V, VDS=-15V, RL=10Ω,

tD(off)

Turn-Off DelayTime

RGEN=3Ω

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time IF=-1.5A, dI/dt=100A/µs

Qrr

Body Diode Reverse Recovery Charge IF=-1.5A, dI/dt=100A/µs

28

40

nC

13.5 19 nC

2

nC

4

nC

7

ns

5

ns

190

ns

62

ns

15

ns

5

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 0: Oct. 2012

www.aosmd.com

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