AOC2414 Ver la hoja de datos (PDF) - Alpha and Omega Semiconductor

Número de pieza

componentes Descripción

Lista de partido

AOC2414

8V N-Channel MOSFET

Alpha and Omega Semiconductor 

AOC2414

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSS

VGS(th)

Gate-Body leakage current

Gate Threshold Voltage

RDS(ON) Static Drain-Source On-Resistance

gFS

Forward Transconductance

VSD

Diode Forward Voltage

ID=250µA, VGS=0V

8

V

VDS=8V, VGS=0V

TJ=55°C

1

µA

5

VDS=0V, VGS=±5V

±10 µA

VDS=VGS ID=250µA

0.2 0.52 0.8

V

VGS=2.5V, ID=1.5A

TJ=125°C

15.5 19

mΩ

19.5 24

VGS=1.8V, ID=1A

16.5 21 mΩ

VGS=1.5V, ID=1A

18

24 mΩ

VGS=1.2V, ID=1A

21

29 mΩ

VDS=5V, ID=1.5A

30

S

IS=1A,VGS=0V

0.54 1

V

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=4V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

2042

pF

600

pF

298

pF

2.4

KΩ

SWITCHING PARAMETERS

Qg

Qgs

Qgd

tD(on)

tr

tD(off)

tf

trr

Qrr

Total Gate Charge

Gate Source Charge

VGS=4.5V, VDS=4V, ID=1.5A

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

VGS=2.5V, VDS=4V, RL=2.67Ω,

RGEN=3Ω

Turn-Off Fall Time

Body Diode Reverse Recovery Time IF=1.5A, dI/dt=100A/µs

Body Diode Reverse Recovery Charge IF=1.5A, dI/dt=100A/µs

21.5 32 nC

10.5

nC

4.5

nC

2.5

µs

4

µs

5

µs

8

µs

20

ns

10

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 0: Nov. 2012

www.aosmd.com

Page 2 of 5

Share Link: