AOC2421 Ver la hoja de datos (PDF) - Alpha and Omega Semiconductor

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AOC2421

20V P-Channel MOSFET

Alpha and Omega Semiconductor 

AOC2421

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSS

VGS(th)

Gate-Body leakage current

Gate Threshold Voltage

RDS(ON) Static Drain-Source On-Resistance

gFS

Forward Transconductance

VSD

Diode Forward Voltage

ID=-250µA, VGS=0V

-8

V

VDS=-8V, VGS=0V

TJ=55°C

-1

µA

-5

VDS=0V, VGS=±5V

±10 µA

VDS=VGS ID=-250µA

-0.2 -0.45 -0.7 V

VGS=-2.5V, ID=-1.5A

TJ=125°C

50

62

mΩ

63.5 79

VGS=-1.8V, ID=-1A

57

72 mΩ

VGS=-1.5V, ID=-1A

65

85 mΩ

VGS=-1.2V, ID=-1A

83 115 mΩ

VDS=-5V, ID=-1.5A

12

S

IS=-1A,VGS=0V

-0.6 -1

V

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=-4V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

752

pF

178

pF

104

pF

1.6

ΚΩ

SWITCHING PARAMETERS

Qg

Qgs

Qgd

tD(on)

tr

tD(off)

tf

trr

Qrr

Total Gate Charge

Gate Source Charge

VGS=-4.5V, VDS=-4V, ID=-1.5A

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

VGS=-2.5V, VDS=-4V, RL=2.67Ω,

RGEN=3Ω

Turn-Off Fall Time

Body Diode Reverse Recovery Time IF=-1.5A, dI/dt=100A/µs

Body Diode Reverse Recovery Charge IF=-1.5A, dI/dt=100A/µs

7.5 13 nC

1.5

nC

1.0

nC

285

ns

465

ns

1870

ns

1900

ns

12

ns

4

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 0: Nov. 2012

www.aosmd.com

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