AOC2423 Ver la hoja de datos (PDF) - Alpha and Omega Semiconductor

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AOC2423

20V P-Channel MOSFET

Alpha and Omega Semiconductor 

AOC2423

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSS

VGS(th)

Gate-Body leakage current

Gate Threshold Voltage

RDS(ON) Static Drain-Source On-Resistance

gFS

Forward Transconductance

VSD

Diode Forward Voltage

ID=-250µA, VGS=0V

-20

V

VDS=-20V, VGS=0V

TJ=55°C

-1

µA

-5

VDS=0V, VGS=±12V

±10 µA

VDS=VGS ID=-250µA

-0.5 -0.85 -1.2 V

VGS=-10V, ID=-1A

TJ=125°C

65

80

mΩ

86.5 107

VGS=-4.5V, ID=-1A

74

95 mΩ

VGS=-2.5V, ID=-1A

92 120 mΩ

VDS=-5V, ID=-1A

6.5

S

IS=-1A,VGS=0V

-0.74 -1

V

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=-10V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

470

pF

92

pF

60

pF

12.5

Ω

SWITCHING PARAMETERS

Qg(10V) Total Gate Charge

10

nC

Qg(4.5V) Total Gate Charge

Qgs

Gate Source Charge

VGS=-10V, VDS=-10V, ID=-1A

5

nC

2

nC

Qgd

Gate Drain Charge

0.5

nC

tD(on)

Turn-On DelayTime

7.5

ns

tr

Turn-On Rise Time

VGS=-10V, VDS=-10V, RL=10Ω,

10

ns

tD(off)

Turn-Off DelayTime

RGEN=3Ω

50

ns

tf

Turn-Off Fall Time

24

ns

trr

Body Diode Reverse Recovery Time IF=-1A, dI/dt=100A/µs

8.5

ns

Qrr

Body Diode Reverse Recovery Charge IF=-1A, dI/dt=100A/µs

3

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 0: Oct. 2012

www.aosmd.com

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