AOD414 Ver la hoja de datos (PDF) - Alpha and Omega Semiconductor
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AOD414 Datasheet PDF : 5 Pages
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AOD414, AOD414L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
IDSS
Zero Gate Voltage Drain Current
VDS=24V, VGS=0V
TJ=55°C
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
1.2
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
110
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
VGS=4.5V, VDS=15V, ID=20A
tr
tD(off)
tf
trr
Qrr
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=100A/µs
Typ Max Units
V
0.005 1
µA
5
100 nA
1.8 2.4
V
A
4.2 5.2
mΩ
6
7.5
5.6
7
mΩ
85
S
0.7
1
V
85
A
6060 7000 pF
638
pF
355
pF
0.45 0.6
Ω
96.4 115 nC
46.4 55
nC
13.6
nC
15.6
nC
15.7 21
ns
14.2 21
ns
55.5 75
ns
14
21
ns
31
38
ns
24
29
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any a given application depends
on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve
provides a single pulse rating.
G. The maximum current ratiTngC=is1li0m0ite°dCby the package current capability.
TA=25°C
-55 to 175
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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