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AON7400

30V N-Channel MOSFET

Alpha and Omega Semiconductor 

AON7400

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

30

V

IDSS

Zero Gate Voltage Drain Current

VDS=30V, VGS=0V

TJ=55°C

1

µA

5

IGSS

Gate-Body leakage current

VDS=0V, VGS= ±12V

100 nA

VGS(th) Gate Threshold Voltage

VDS=VGS ID=250µA

1 1.55 2.5

V

ID(ON)

On state drain current

VGS=10V, VDS=5V

80

A

RDS(ON) Static Drain-Source On-Resistance

VGS=10V, ID=10A

TJ=125°C

10.5 12.5

mΩ

14.7

VGS=4.5V, ID=10A

12.2 14.5 mΩ

gFS

Forward Transconductance

VDS=5V, ID=10A

40

S

VSD

Diode Forward Voltage

IS=1A,VGS=0V

0.74 1

V

IS

Maximum Body-Diode Continuous Current

35

A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

1210 1452 pF

330 396 pF

85 119 pF

0.8 1.2 1.6

Ω

SWITCHING PARAMETERS

Qg(10V) Total Gate Charge

22

28

nC

Qg(4.5V) Total Gate Charge

Qgs

Gate Source Charge

VGS=10V, VDS=15V, ID=10A

10

13

nC

3.7

nC

Qgd

Gate Drain Charge

2.7

nC

tD(on)

Turn-On DelayTime

10

ns

tr

Turn-On Rise Time

VGS=10V, VDS=15V, RL=1.1Ω,

6.3

ns

tD(off)

Turn-Off DelayTime

RGEN=3Ω

21

ns

tf

Turn-Off Fall Time

2.8

ns

trr

Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/µs

36

45

ns

Qrr

Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs

47

nC

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initialTJ=25°C.

D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with

2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 3: Mar. 2011

www.aosmd.com

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